杨世才,阿布都艾则孜·阿布来提,简基康,郑毓峰,孙言飞,吴荣

• 1:新疆大学物理科学与技术学院

摘要(Abstract)：

在纯氮气气氛、衬底温度为20℃至370℃的条件下,分别在硅(100)和石英衬底上沉积氮化铝薄膜.原子力显微镜图片表明:在不同衬底温度制备的薄膜表面平滑,均方根粗糙度为2.2～13.2nm.X射线衍射图谱表明:可以在衬底温度为180°条件下沉积出具有c-轴择优取向的纤锌矿氮化铝薄膜,衬底温度的增加有利于薄膜结晶性的改善.由紫外-可见光透射谱计算得到薄膜折射率为1.80～1.85,膜厚约为1μm、光学能隙为6.1eV.

关键词(KeyWords)： 氮化铝;磁控反应溅射;择优取向;纯氮气

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金资助项目(No.10864004;No.50862008);; 新疆大学博士启动基金(No.BS080109;No.BS060110)

作者(Author): 杨世才,阿布都艾则孜·阿布来提,简基康,郑毓峰,孙言飞,吴荣

参考文献(References)：

• [1]Jacquot A,Lenoir B,Dauscher A,et al.Optical and thermal characterization of AlN films deposited by pulsed laser deposition[J].Applied Surface Science,2002,186:507-512.
• [2]Mortet V,Vasin A,Jouan P Y,et al.Aluminium nitride films deposition by reactive triode sputtering for surface acoustic wave device applications[J].Surface and Coatings Technology,2003,176:88-92.
• [3]Guo Q X,Yahata K,Tanaka T,et al.Low-temperature growth of aluminum nitride on sapphire substrates[J].J Cryst Growth,2003,257:123-128.
• [4]Kuan H C,Jiann H C,Hong R C,et al.Depositiong and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator[J].Thin Solid Film,2007,515:4819-4825.
• [5]Hiroshi O,Yusuke T,Toshiharu T.Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering [J].Jpn J Appl Phys,1992,31:3446-3451.
• [6]Chien C C,Ying C C,Hong J W,et al.Low-temperature growth of aluminum nitride thin films on silicon by reactive radio frequency magnetron sputtering[J].J Vac Sci Technol A,Vac Surf Films,1996,14(4):2238-2242.
• [7]Matsunami N,Venkatachalam S,Tazawa M.Ion beam characterization of rf-sputter deposited AlN film on si(100)[J]. Nuclear Instruments and Mechods in Physics Reseach B,2008,266:1522-1526.
• [8]乔保卫.磁控反应溅射AlN薄膜的制备工艺与性能研究[D].西北工业大学硕士学位论文,2003.
• [9]杨保和,徐娜,陈希明,等.射频磁控溅射生长C轴择优取向AlN压电薄膜[J].光电子.激光,2007,18(12):1430-1435.
• [10]张艳军,李友明,宋晶,等.纳米/微米碳酸钙的结构表征和热分解行为[J].物理化学学报,2007,23(5):717-722.
• [11]麦振洪.薄膜结构X射线表征[M].北京:科学出版社,2007,130.
• [12]丛秋滋.多晶二维X射线衍射[M].北京:科学出版社,1997,185-190.
• [13]Xiao H X,Hai S W,Cong J Z,et al.Morphlogical properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering[J].Thin Solid Film,2001,388:62-67.
• [14]颜国君,陈光德,品惠民.纳米六方相氮化铝的合成和光学性能研究[J].化学学报,2006,64(16):1688-1692.
• [15]余海湖,伍宏标,李小甫,等.二氧化硅纳米粒子薄膜的制备及光学性能[J].物理化学学报,2001,17:1057-1061.
• [16]缪向水,胡用时,林更琪,等.AlN和AlSiN薄膜的制备工艺及其光学特性[J].华中理工大学学报,1995,23:185-188.
• [17]朱春燕,朱昌.磁控反应溅射AlN薄膜光学性能研究[J]].表面技术,2008,37(1):1.
• [18]Sanepoel R.Determination of the thickness and optical constants of amorphous silicon[J].J Phys E:Sci Instrum,1983,16: 1214-1234.
• [19]Chakrabarti K,Chattopadhyay K K,Chaudhuri S,et al.Optical characterization of AlN films:measurement of stress[J]. Materials Chemistry and Physics,1997,50:50-56.
• [20]Jamesh E.Properties of groupⅢnitrides[M].London:INSPEC,the Institution of Electrical Engineers,1994,27(31):7-18.
• [21]董树荣,王德苗.FBAR用AlN薄膜的射频反应溅射制备研究[J].真空科学与技术学报,2006,26(2):155-158.