碲化镉纳米线的制备和生长机理分析Growth of CdTe Nanowires and Analyse of Growth Mechanism
姜海涛,郑毓峰,简基康,孙言飞,陈艳华
摘要(Abstract)：
利用物理气相沉积方法,在S i衬底上制备了CdT e纳米线和纳米晶.X射线衍射(XRD)和扫描电子显微镜(SEM)研究表明所得产物为四方结构CdT e.CdT e纳米线的直径约20nm,长度约为几个微米,纳米晶粒径约为100 nm.分析了载流气体流速、温度等因素对过饱和度的影响,进而影响低维纳米材料的形貌结构.
关键词(KeyWords)： 物理气相沉积(PVD);CdTe;纳米线;纳米晶;生长机理
基金项目(Foundation): 国家自然科学基金资助项目(50062002)
作者(Author): 姜海涛,郑毓峰,简基康,孙言飞,陈艳华
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DOI:
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