吕德极限(高效、高功、低噪、微波雪崩振荡器研究之一)
李肇遐
摘要(Abstract):
经过概括和推导建立一个求取接近或者高于吕德极限效率的公式,该式的逻辑形式和內容除了适用于高效率微波雪崩二极管的最佳化设计以外,还能用来指导突破吕德极限的高效率实验。
关键词(KeyWords):
基金项目(Foundation):
作者(Author): 李肇遐
参考文献(References):
- [1] Read, W. T., Bell System Tech. J., 37, no. 2: 401-44(?) (Mar. 1958)
- [2] Johnston, R. L., B. C. DeLoach et al., BellSystem Tech. J., 44, no. 2: 369-372 (Feb. 1965)
- [3] Irvin(?) J. C., Solid-State Device Res. Conf. (Jun. 1965) ; IEEE Trans. on Electron Dev. (Corres.) ED-13: 208-210 (Jan. 1966)
- [4] Brand, F. A. et als(?) Proc. IEEE ((Corres.) 53: 1276-1277 (Sept. 1965)
- [5] Misawa, T., IEEE Trans. on Electron Devices) ED-13, no. 1: 137. 151 (Jan. 1966)
- [6] Scharffeter, D. I,. and H. K. Cummel, IEEE Trans. on Electron Devices, ED-16, no. 1: 64. 77 (Jan. 1969)
- [7] Higgins(?) v. J. et als, IEEE Trans. on Electron Dev. (Corrcs.) ED-13: 210-212 (Jan. 1966)
- [8] Kim, C. et als, Electronic Letters, 9, no. 8/9: 173-174 (May 3, 1973)
- [9] Irvin, J. C. et als, Device Research Conf., Boulder, Colo. (June 1973)
- [10] Wisseman, W. R. et als, Device Research Conf., Boulder, Colo., (June 1973)
- [11] Salmer, G. etals, J. Appl. Phys. 44: 314-324 (Jan. 1973)
- [12] Huang, H. C., IEEE Trans. on Electron Devices, ED-20: 482-486 (May 1973)
- [13] Su, S. and S. M, Sze, IEEE Trans. on Electron Dev. ED-20: 541-543 (June 1973)
- [14] Kramer, A., Electron. Lett. 11, no. 21: 509-511 (oct. 1975)
- [15] Elcetron, Lett. 13, no. 7: 178-179) Mar. 1977)
- [16] Proeedinga Fourth Biennial Cornell Electrical Engineneering Confernce. 1973 Topic M(?)rowave Semi(?)onductor Devies and Appliea(?)ons, pp 290-298