邹华,吴荣,孙言飞,郑毓峰,简基康

• 1:新疆大学物理科学与技术学院

摘要(Abstract)：

本文以CdS和ZnS粉末作为前驱物,采用化学气相沉积(CVD)法在1100条件下,以金膜为催化剂在硅衬底上一步合成了Zn1-XCdXS三元纳米线.扫描电镜(SEM)测试表明合成的Zn1-XCdXS晶体具有线状的微观形貌;X射线衍射(XRD)图谱显示产物是六方铅锌矿Zn0.2Cd0.8S;X射线能量色散谱(EDX)给出了Zn和Cd和S的比例为0.1:0.7:1.产物Zn1-XCdXS纳米线的生长机理为气-液-固(VLS)机制,物相形成机制为替位式化合机制,即Zn离子取代CdS中Cd离子化合成三元物相.

关键词(KeyWords)： Zn1-XCdXS;化学气相沉积;纳米线;生长机理

Abstract:

Keywords:

基金项目(Foundation): 新疆大学博士启动基金资助项目(No.BS060110)

作者(Author): 邹华,吴荣,孙言飞,郑毓峰,简基康

参考文献(References)：

• [1]Duan X F,Huang Y,Argarawal R,et al.Nanowire Crossbar Arrays as Address Decoders for Integrated Nanosystems[J].Nature,2003,421:241-244.
• [2]Pan Z W,Dai Z R,Wang Z L.Nanobelts of Semiconducting Oxides[J].Science,2001,291:1947-1951.
• [3]Wu Y Y,Yan H Q,Huang M,at al.A novel method for making CuO superfine fibres via an electrospinning technique[J].Chem Eur J,2002,8:1261-1265.
• [4]Zhang H,Zhang S Y,Zuo M,at al.Synthesis of ZnS Nanowires and Assemblies by Carbothermal Chemical Vapor Deposition and Their Photoluminescence[J].Eur J Inorg Chem,2005,1:47-50.
• [5]Pan A L,Yang H,Wang Z L,at al.Color-Tunable Photoluminescence of Alloyed CdSXSe1-X nanobelts[J].J Am Chem Soc,2005,127:45-48.
• [6]Liu Yingkai,Juan Antonio Zapien,Lee shuit-Tong.Wavelength-Controlled Lasing in ZnXCd1-XS Single-Crystal Nanorib-bons[J].Adv Mater,2005,17:1372-1377.
• [7]Liu H J,Zhu Y C.Synthesis and characterization of ternary chalcogenide ZnCdS1D nanostructures[J].Materials Letters,2008,62:255-257.
• [8]Zhai Tiaoyou,Zhang Xinzheng,Yao Jiannian,at al.Growth of single crystalline ZnXCd1-XS nanocombs by metallo-organic chemical vapor deposition[J].Chemical Physics Letters,2007,427:371-374.
• [9]Liu Yifeng,Hsu Yungjung,Tseng Tseungyuen.Well-Aligned Ternary Cd1-XZnXS Nanowire Arrays and Their Composition-Dependent Field Emission Properties[J].J Phys Chem C,2007,111:13418-13426.
• [10]Salem A M.Structure,Refractive-index Dispersion and the Optical Absorption Edge of Chemically Deposited ZnxCd(1-x)S Thin Films[J].Appl Phys A,2002,74:205-210.
• [11]Boyle D S,Robbe O,Halliday D P.A novel method for the synthesis of the ternary thin film semiconductor cadmium zinc sulfide from acidic chemical baths[J].J Mater Chem,2000,10:2439-2441.
• [12]Kulkarni S K,Winkler U,Deshmukh N,at al.Investigations on chemically capped CdS,ZnS and ZnCdS nanoparticles[J].Appl Surf Sci,2001,438:169-170.
• [13]Sebastian P J,Narvaez J.Photosensitive ZnCdS nanoparticles in a CdS matrix formed by high temperature sintering of ZnS and CdCl2in argon[J].Thin Solid Film,1996,287:115-119.
• [14]Wang W,Germanenko Igor,Ei-Shall M S.Room-Temperature Synthesis and Characterization of Nanocrystalline CdS,ZnS,and CdxZn1-xS[J].Chem Mater,2002,14:3028-3033.
• [15]Hou Junwei,Song Bo,Zhang Zhihua at al.Synthesis of highly crystallized ternary CdxZn1-xS nanowires by chemical vapor deposition[J].Submitted to Acta Physico-Chimica Sinica.
• [16]Wagner R S,Ellis W C.Vapor-liquid-solid mechanism of single crystal growth[J].Applied Physics Letters,1964,4:5-7.
• [17]Lee S T,Wang N,Lee C S.Semiconductor nanowire:synthesis,structure and properties[J].Materials Science and Engi-neering,2002,A286:16-23.