用正电子湮没方法研究高能重离子辐照半导体InPPositron Annihilation Study of InP Irradiated by High Energy Heavy Ion
黄龙
摘要(Abstract)：
采用正电子湮没寿命谱方法 ,对 1 .6× 1 0 1 6 cm- 2注量的 85 Me V1 9F离子辐照 P型 In P单晶的微观缺陷进行了研究 ,在 3 0 0～ 1 0 2 3 K的温度范围内测量了正电子湮没寿命随退火温度的变化 .实验表明 :辐射在 In P中产生单空位缺陷 ,在退火过程中单空位相互聚合形成双空位 .单空位和双空位分别在 5 73 K和 72 3 K温度完全被退火
关键词(KeyWords)： InP;重离子辐照;正电子湮没;退火效应
基金项目(Foundation):
作者(Author): 黄龙
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参考文献(References)：
- [1]MahonyJ,MascherP,PuffW.On theContribution ofVacancyComplexes to theSaturation of theCarrierConcentration inZincDopedInP [J].JApplPhys,1996,80:2712.
- [2]SummersGP,BurkeEA,ShapiroP,etal.DamageCorrelations inSemiconductorsExposed toGamma,Electron andProtonRadiations[J].IEEE TransNuclSci,1993,40:1372.
- [3]XapsosMA,SummersGP,BlatchleyCC,et al.GammaRay andElectronDisplacementDamageStudies ofSemiconductors[J].IEEE TransNuclSci,1994,41:1945.
- [4]KansyJ.MicrocomputerProgram forAnalysis ofPositronAnnihilationLifetimeSpectra[J].NuclInstrMeth,1996,A374:235.
- [5]BretagnonT,DannefaerS,KerrD.IndiumVacancy inAs-grownInP:A PositronAnnihilationStudy[J].JApplPhys,1993,73:4697.
- [6]DlubekG,BrummerO,PlazaolaF,etal.PositronStudy ofNativeVacancies inDoped andUndopedGaAs[J].JPhys,1986,C19:331.
- [7]朱升云.CIAENAL核分析研究的进展和现状[J].核物理动态,1994,11(2):39.