用正电子湮没方法研究高能重离子辐照半导体InPPositron Annihilation Study of InP Irradiated by High Energy Heavy Ion
黄龙
摘要(Abstract)：
采用正电子湮没寿命谱方法 ,对 1 .6× 1 0 1 6 cm- 2注量的 85 Me V1 9F离子辐照 P型 In P单晶的微观缺陷进行了研究 ,在 3 0 0～ 1 0 2 3 K的温度范围内测量了正电子湮没寿命随退火温度的变化 .实验表明 :辐射在 In P中产生单空位缺陷 ,在退火过程中单空位相互聚合形成双空位 .单空位和双空位分别在 5 73 K和 72 3 K温度完全被退火
关键词(KeyWords)： InP;重离子辐照;正电子湮没;退火效应
基金项目(Foundation):
作者(Author): 黄龙
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