亚森江·吾甫尔;买买提明·艾尼;买买提热夏提·买买提;阿布都艾则孜·阿布来提;

• 1:新疆大学机械工程学院
• 2:新疆大学物理科学与技术学院

摘要(Abstract)：

不断缩小半导体器件尺寸将引起二氧化硅绝缘层厚度逐渐地减薄,从而导致从栅极泄漏到衬底的栅极漏电流的明显增加,这制约了MOSFET性能的提升.为了进一步了解采用高k电介质材料增强MOSFET性能的物理机制,本文通过采用基于非平衡格林函数的数值模拟方法,探讨了高k电介质材料及其等效厚度对于短沟道双栅极MOSFET性能的影响.模拟结果表明,高k材料介电常数的增加或等效氧化层厚度(EOT)的减小均将引起沟道区域能量势垒高度的减小,从而导致沟道电子数密度的增加而使漏极电流增加.因此,采用高k电介质材料为绝缘膜可有效地束缚栅极漏电流,从而提高短沟道双栅极MOSFET的性能.

关键词(KeyWords)： 器件性能;高k;漏电流;双栅MOSFET

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金(61366001,61464010)

作者(Author): 亚森江·吾甫尔;买买提明·艾尼;买买提热夏提·买买提;阿布都艾则孜·阿布来提;

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DOI:

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