王盛儒;郭钦桦;简基康;

• 1:广东工业大学物理与光电工程学院

摘要(Abstract)：

半导体和拓扑绝缘体是两类重要的功能材料,其纳米异质结可能具有特殊的物性和应用.本文利用两步法制备了半导体SnSe和拓扑绝缘体Bi_2Se_3纳米片异质结,对样品的结构和形貌进行了表征.首先用溶剂热技术制备出形貌均匀的Bi_2Se_3纳米片,再以之为衬底,以Sn Se粉末为蒸发源,利用真空热蒸发技术制备SnSe/Bi_2Se_3纳米片异质结.X射线衍射和扫描电子显微术表征了样品的物相和形貌,结果显示在三方结构的Bi_2Se_3纳米片上沉积得到了均匀分布的正交相Sn Se纳米颗粒,可以通过热蒸发实验参数调控纳米颗粒的厚度和密度.本研究的实验方法简便易行,得到的新型纳米异质结在近红外光电探测方面有潜在应用.

关键词(KeyWords)： Bi2Se3纳米片;SnSe纳米颗粒;纳米片异质结

Abstract:

Keywords:

基金项目(Foundation): 广州市科技计划项目（201707010251）

作者(Authors): 王盛儒;郭钦桦;简基康;

DOI: 10.13568/j.cnki.651094.651316.2020.04.01.0001

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